Kikuo Yamabe

First-principles studies of the intrinsic effect of nitrogen atoms on reduction in gate leakage current through Hf-based high-k dielectrics

Naoto Umezawa, Kenji Shiraishi, Takahisa Ohno et al. · Applied Physics Letters · 2005 · 159 citations · Full text

Engineering, N Atoms, Electron Leakage +17

Time-dependent-dielectric breakdown of thin thermally grown SiO₂films

Kikuo Yamabe, Kenji Taniguchi · IEEE Transactions on Electron Devices · 1985 · 128 citations

Electrical Engineering, Engineering, High Voltage Engineering +12

Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning

Y. Akasaka, Genji Nakamura, Kenji Shiraishi et al. · Japanese Journal of Applied Physics · 2006 · 105 citations

Engineering, Silicon On Insulator, Semiconductor Device +17

Nonplanar oxidation and reduction of oxide leakage currents at silicon corners by rounding-off oxidation

Kikuo Yamabe, Keitaro Imai · IEEE Transactions on Electron Devices · 1987 · 79 citations

Engineering, Integrated Circuits, Silicon On Insulator +17

Study of oxygen vacancies in SrTiO3 by positron annihilation

Akira Uedono, Kazuo Shimayama, Masahiro Kiyohara et al. · Journal of Applied Physics · 2002 · 76 citations

Oxygen Vacancies, Engineering, Positron Annihilation Spectroscopy +16