T. Ohmi

Growth of native oxide on a silicon surface

Mizuho Morita, T. Ohmi, Eiji HASEGAWA et al. · Journal of Applied Physics · 1990 · 885 citations · Full text

Engineering, Materials Engineering, Materials Science +17

A functional MOS transistor featuring gate-level weighted sum and threshold operations

T. Shibata, T. Ohmi · IEEE Transactions on Electron Devices · 1992 · 616 citations · Full text

Engineering, Computer Engineering, Electrical Engineering +17

Dependence of thin-oxide films quality on surface microroughness

T. Ohmi, M. Miyashita, M. Itano et al. · IEEE Transactions on Electron Devices · 1992 · 303 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Control factor of native oxide growth on silicon in air or in ultrapure water

Mizuho Morita, T. Ohmi, Eiji HASEGAWA et al. · Applied Physics Letters · 1989 · 212 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +16

Dependence of electron channel mobility on Si-SiO/sub 2/ interface microroughness

T. Ohmi, Kazuhiko Kotani, Akinobu Teramoto et al. · IEEE Electron Device Letters · 1991 · 170 citations

Engineering, Electrical Engineering, Materials Science +16