Eiji HASEGAWA

Growth of native oxide on a silicon surface

Mizuho Morita, T. Ohmi, Eiji HASEGAWA et al. · Journal of Applied Physics · 1990 · 885 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Control factor of native oxide growth on silicon in air or in ultrapure water

Mizuho Morita, T. Ohmi, Eiji HASEGAWA et al. · Applied Physics Letters · 1989 · 212 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +16

SiO2 / Si Interface Structures and Reliability Characteristics

Eiji HASEGAWA, Akihiko Ishitani, Koichi Akimoto et al. · Journal of The Electrochemical Society · 1995 · 99 citations

Engineering, Materials Engineering, Materials Science +17

Interface defects responsible for negative-bias temperature instability in plasma-nitrided SiON/Si(100) systems

Shinji Fujieda, Yoshinao Miura, Motofumi Saitoh et al. · Applied Physics Letters · 2003 · 72 citations

Natural Sciences, Materials Science, Physics +17

Mechanism of leakage current through the nanoscale SiO2 layer

Seido Nagano, Masaru Tsukiji, K. Ando et al. · Journal of Applied Physics · 1994 · 54 citations

Engineering, Electrical Engineering, Materials Science +17