Yoshinao Miura

Interface defects responsible for negative-bias temperature instability in plasma-nitrided SiON/Si(100) systems

Shinji Fujieda, Yoshinao Miura, Motofumi Saitoh et al. · Applied Physics Letters · 2003 · 72 citations

D2 Annealing, Engineering, Silicon On Insulator +16

Bonding configurations of nitrogen absorption peak at 960 cm−1 in silicon oxynitride films

Haruhiko Ono, Taeko Ikarashi, Yoshinao Miura et al. · Applied Physics Letters · 1999 · 50 citations

Absorption Peak, Engineering, Optoelectronic Devices +19

Single-crystal Al growth on Si(111) by low-temperature molecular beam epitaxy

Yoshinao Miura, S. Fujieda, Kazuyuki Hirose · Applied Physics Letters · 1993 · 31 citations

Materials Engineering, Surface Technology, Materials Science +14

High Performance Superjunction UMOSFETs with Split P-Columns Fabricated by Multi-Ion-Implantations

Yoshinao Miura · 2005 · 21 citations

Electrical Engineering, Engineering, Split P-column Structures +15

Reoxidation effects on the chemical bonding states of nitrogen accumulated at the oxynitride/silicon interface

Yoshinao Miura, Haruhiko Ono, K. Ando · Applied Physics Letters · 2000 · 18 citations

Reoxidation Process, Engineering, Oxidation Resistance +16