Interfacial reactions between thin rare-earth-metal oxide films and Si substrates

Haruhiko Ono, Tooru Katsumata

Applied Physics Letters

Materials ScienceOxide HeterostructuresInterfacial ReactionsRare-earth ElementsEngineering +13

Effects of thermal annealing on porous silicon photoluminescence dynamics

Norio Ookubo, Haruhiko Ono, Yukinori Ochiai, +2

Applied Physics Letters

Decay DynamicsIi-vi SemiconductorChemical EngineeringPhotoluminescenceEngineering +8

Infrared absorption peak due to Ta=O bonds in Ta2O5 thin films

Haruhiko Ono, Ken-ichi Koyanagi

Applied Physics Letters

Absorption PeakEngineeringTransmission Fourier-transformAbsorption SpectroscopyThin Film Process Technology +19

RuO₂/TiN-Based Storage Electrodes for (Ba, Sr)TiO₃ Dynamic Random Access Memory Capacitors

Koichi Takemura, Shintaro Yamamichi, Pierre‐Yves Lesaicherre, +5

Japanese Journal of Applied Physics

Non-volatile MemoryEngineeringElectrode-electrolyte InterfaceThin Film Process TechnologyResistive Random-access Memory +15

Infrared studies of transition layers at SiO2/Si interface

Haruhiko Ono, Taeko Ikarashi, K. Ando, +1

Journal of Applied Physics

Optical MaterialsEngineeringOptoelectronic DevicesSilicon On InsulatorOptical Characterization +14

Bonding configurations of nitrogen absorption peak at 960 cm−1 in silicon oxynitride films

Haruhiko Ono, Taeko Ikarashi, Yoshinao Miura, +3

Applied Physics Letters

Absorption PeakEngineeringOptoelectronic DevicesChemistrySemiconductor Nanostructures +17

SrTiO₃ thin films by mocvd for 1 gbit DRAM application

Pierre‐Yves Lesaicherre, Hiromu Yamaguchi, Yoichi Miyasaka, +3

Integrated ferroelectrics

Thin Film PhysicsEngineeringEmerging Memory TechnologyThin Film Process TechnologyChemical Deposition +16

Local lattice strain distribution around a transistor channel in metal–oxide–semiconductor devices

Akio Toda, Nobuyuki Ikarashi, Haruhiko Ono, +3

Applied Physics Letters

SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringCrystalline Defects +11

Crystallization of Amorphous Silicon with Clean Surfaces

Akira Sakai, Haruhiko Ono, Koichi Ishida, +2

Japanese Journal of Applied Physics

EngineeringInitial NucleationSilicon On InsulatorAmorphous MaterialsSilicene +14

Local lattice strain measurements in semiconductor devices by using convergent-beam electron diffraction

Akio Toda, Nobuyuki Ikarashi, Haruhiko Ono

Journal of Crystal Growth

SemiconductorsSemiconductor DevicesEngineeringDislocation InteractionPhysics +5