Statistics
Publications
11
Citations
558
H-Index
11
Active since
1991
Affiliations
NEC (Japan)(Current)
K. Ando is an author at NEC (Japan) specializing in materials science, semiconductor interfaces, and engineering.
Publications per year
1991–2003
11
11
Mechanism of leakage current through the nanoscale SiO2 layer
Seido Nagano, Masaru Tsukiji, K. Ando et al. · Journal of Applied Physics · 1994 · 54 citations
Infrared studies of transition layers at SiO2/Si interface
Haruhiko Ono, Taeko Ikarashi, K. Ando et al. · Journal of Applied Physics · 1998 · 52 citations
Natural Sciences, Materials Engineering, Materials Science +17
1–5 of 11