Characterization of interface defects related to negative-bias temperature instability in ultrathin plasma-nitrided SiON/Si〈100〉 systems

Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing

D.K. Schroder, Jeff A. Babcock · Journal of Applied Physics · 2003 · 1K citations

Engineering, Electrical Engineering, Physics +17

Negative bias stress of MOS devices at high electric fields and degradation of MNOS devices

Kjell Jeppson, Christer Svensson · Journal of Applied Physics · 1977 · 678 citations · Full text

Engineering, Electrical Engineering, Materials Science +14

Interface states and electron spin resonance centers in thermally oxidized (111) and (100) silicon wafers

Edward H. Poindexter, P. J. Caplan, Bruce E. Deal et al. · Journal of Applied Physics · 1981 · 558 citations

Engineering, Materials Engineering, Materials Science +17

Interface traps and <i>P</i> <i>b</i> centers in oxidized (100) silicon wafers

G. J. Gerardi, Edward H. Poindexter, P. J. Caplan et al. · Applied Physics Letters · 1986 · 321 citations

Engineering, Materials Science, Physics +17

Microscopic Structure Of The SiO2/Si Interface

F. J. Himpsel, F. R. McFeely, A. Taleb‐Ibrahimi et al. · 1988 · 211 citations

Natural Sciences, Materials Engineering, Materials Science +14