F. J. Himpsel - Concepedia

Author

F. J. Himpsel

IBM Research - Thomas J. Watson Research Center

Also Known As

F J Himpsel, F. -J. Himpsel, F. Himpsel, F. J. Himpsel, F.-J. Himpsel, F.J Himpsel, F.J. Himpsel, F.‐J. Himpsel, Rachel Willis, Willis, R. F.

201

Publications

10.9K

Citations

H-Index

Concepts

All Affiliations

IBM Research - Thomas J. Watson Research Center University of Wisconsin–Madison IBM (United States)Deutsches Elektronen-Synchrotron DESY

About

F. J. Himpsel is an author at IBM Research - Thomas J. Watson Research Center specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	54	106	8.8K
2	Applied Physics	53	101	8.6K
3	Natural Sciences	33	46	4.3K
4	Health Sciences	1	1	84
5	Medicine	1	1	44

F. J. Himpsel

113

Publications

9.3K

Citations

H-Index

Page 1

	Year	Citations
Probing the transition layer at the SiO2-Si interface using core level photoemission G. Hollinger, F. J. Himpsel Applied Physics Letters EngineeringVacuum DeviceChemistrySilicon On InsulatorNanoelectronics	1984	441
Determination of the Fermi-level pinning position at Si(111) surfaces F. J. Himpsel, G. Hollinger, R. A. Pollak Physical review. B, Condensed matter SemiconductorsSemiconductor TechnologySurface CharacterizationEngineeringPhysics	1983	375
First experimental results from IBM/TENN/TULANE/LLNL/LBL undulator beamline at the advanced light source J. J. Jia, T. A. Callcott, J. Yurkas, Review of Scientific Instruments Short Wavelength OpticOptical MaterialsEngineeringAtomic Emission SpectroscopyAdvanced Light Source	1995	371
Oxidation studies of SiGe F. K. LeGoues, R. Rosenberg, Tùng Lâm Nguyễn, Journal of Applied Physics Materials ScienceMaterials EngineeringChemical EngineeringMolecular SieveEngineering	1989	312
Photoemission studies of intrinsic surface states on Si(100) F. J. Himpsel, D. E. East̀man Journal of Vacuum Science and Technology Materials ScienceSemiconductorsSurface CharacterizationEngineeringPhysics	1979	263
Probing valence states with photoemission and inverse photoemission F. J. Himpsel, Thomas Fauster Journal of Vacuum Science & Technology A Vacuum Surfaces and Films SemiconductorsExcited State PropertyEngineeringPhotochemistryPhysics	1984	253
C 1<i>s</i>excitation studies of diamond (111). I. Surface core levels J. F. Morar, F. J. Himpsel, G. Hollinger, Physical review. B, Condensed matter EngineeringChemistryElectron SpectroscopySurface Core LevelsFluorine-covered Surface	1986	225
Multiple-bonding configurations for oxygen on silicon surfaces G. Hollinger, F. J. Himpsel Physical review. B, Condensed matter Materials EngineeringMaterials ScienceChemical EngineeringDifferent Oxidation StatesEngineering	1983	216
Fractional Band Filling in an Atomic Chain Structure Jason Crain, K. N. Altmann, C. Bromberger, Physical Review Letters New Chain StructureEngineeringFractional Band FillingTight Binding FitStepped Si	2003	214
Surface states on Si(111)-(2×1) F. J. Himpsel, P. Heimann, D. E. East̀man Physical review. B, Condensed matter Ii-vi SemiconductorSurface CharacterizationEngineeringPhysicsElectron Spectroscopy	1981	212

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