Applied Physics Letters · 1984 · 442 citations · 16 references
Natural SciencesChemistryMaterials ScienceInterface ScienceSurface ChemistrySurface SciencePhotoelectron SpectroscopySemiconductor InterfacesSemiconductor SurfacesSilicon MaterialsSurface OxidationSurface PhysicsOxidation StatesSemiconductor OxidationSilicon DioxideSilicon InterfacesSilicon OxidationSurface OrientationSurface Oxidation MechanismsSurface Oxidation States
High resolution Si 2p photoelectron spectra obtained with synchrotron radiation are used to determine the distribution of oxidation states in the intermediary layer at the SiO2-Si interface. A ratio of 0.4:0.3:0.3 is found for the Si3+:Si2+:Si1+ intensities independent of Si surface orientation and oxide thickness. The interface is not completely abrupt (5±1 Å width).
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