Jeff A. Babcock

Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing

D.K. Schroder, Jeff A. Babcock · Journal of Applied Physics · 2003 · 1K citations

Engineering, Electrical Engineering, Physics +17

An Investigation of Single-Event Transients in C-SiGe HBT on SOI Current Mirror Circuits

Seung-Woo Jung, Nelson E. Lourenco, Ickhyun Song et al. · IEEE Transactions on Nuclear Science · 2014 · 21 citations

Engineering, Electrical Engineering, Electronic Materials +14

CBC8: A 0.25 µm SiGe-CBiCMOS technology platform on thick-film SOI for high-performance analog and RF IC design

Jeff A. Babcock, Greg Cestra, Wibo van Noort et al. · 2010 · 17 citations

Engineering, Electrical Engineering, Microelectronics +16

Single Event Transient Hardness of a New Complementary (npn <formula formulatype="inline"><tex Notation="TeX">$+$</tex></formula> pnp) SiGe HBT Technology on Thick-Film SOI

Edward P. Wilcox, Stanley D. Phillips, Peng Cheng et al. · IEEE Transactions on Nuclear Science · 2010 · 12 citations

Engineering, Electrical Engineering, Electronic Materials +16

Safe Operating Area from Self-Heating, Impact Ionization, and Hot Carrier Reliability for a SiGe HBT on SOI

Jonggook Kim, Alexei Sadovnikov, Tianbing Chen et al. · Proceedings of the ... Bipolar/BiCMOS Circuits and Technology Meeting/Proceedings of the ... BipolarBiCMOS Circuits and Technology Meeting · 2007 · 11 citations

Engineering, Electrical Engineering, Electronic Materials +16