CBC8: A 0.25 µm SiGe-CBiCMOS technology platform on thick-film SOI for high-performance analog and RF IC design

Abstract

A production released complementary-SiGe BiCMOS technology on SOI has been developed for high speed analog and RFIC applications. It features matched SiGe:C PNP and NPN transistors. The PNP shows cutting edge performance metrics with β·V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">A</sub> = 17,000 and near record f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> ·BVCEO ≥ 195GHz·V for a 5V process while demonstrating best in class linearity on a fully differential amplifier design. A modular process flow was leveraged to enhance the Analog design needs for the platform. For higher-speed lower power, we also demonstrate a low voltage SiGe NPN with peak f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> of 50 GHz at low-bias (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">CE</sub> = 0.5V), ideal for load line drive. Finally, we discuss core CMOS devices which utilize a dual-gate oxide process for improved mixed-signal mixed-voltage design and better optimization of digital blocks.