S. Fujieda

Single silicon vacancy-oxygen complex defect and variable retention time phenomenon in dynamic random access memories

T. Umeda, K. Okonogi, K. Ohyu et al. · Applied Physics Letters · 2006 · 33 citations · Full text

Non-volatile Memory, Electrical Engineering, Simulation Studies +13

Single-crystal Al growth on Si(111) by low-temperature molecular beam epitaxy

Yoshinao Miura, S. Fujieda, Kazuyuki Hirose · Applied Physics Letters · 1993 · 31 citations

Materials Engineering, Surface Technology, Materials Science +14

Quantitative identification for the physical origin of variable retention time: A vacancy-oxygen complex defect model

K. Ohyu, T. Umeda, K. Okonogi et al. · 2006 · 20 citations

Non-volatile Memory, Engineering, Variable Retention Time +17

Direct observation of extended monolayer flat islands at metalorganic vapor phase epitaxy grown Al0.5Ga0.5As-GaAs single quantum well interfaces

F. J. Stützler, S. Fujieda, M. Mizuta et al. · Applied Physics Letters · 1988 · 17 citations

Semiconductors, Monolayer Flat Islands, Growth Islands +15

On-state reliability of solid-electrolyte switch

Naoki Banno, Toshitsugu Sakamoto, S. Fujieda et al. · 2008 · 16 citations

Reliability, Materials Science, Electrical Engineering +15