Concepedia

K. Ohyu

KO

Statistics

Publications

21

Citations

745

H-Index

16

Active since

1978

Affiliations

Hitachi (Japan)(Current)

Yale University

University of Tsukuba

K. Ohyu is an author at Hitachi (Japan) specializing in engineering, semiconductor devices, and microelectronics.

Publications per year

1978–2006

21

Publications

21

Hot-electron hardened Si-gate MOSFET utilizing F implantation

Yasushiro Nishioka, K. Ohyu, Yuzuru Ohji et al. · IEEE Electron Device Letters · 1989 · 104 citations

Engineering, Electrical Engineering, Materials Science +17

MeV-ion-induced damage in Si and its annealing

M. Tamura, Toshio Ando, K. Ohyu · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1991 · 95 citations

Engineering, Materials Science, Physics +12

Advantages of Fluorine Introduction in Boron Implanted Shallow p<sup>+</sup>/n-Junction Formation

K. Ohyu, Toshihiko Itoga, N. Natsuaki · Japanese Journal of Applied Physics · 1990 · 66 citations

Engineering, Materials Engineering, Materials Science +16

The origin of variable retention time in DRAM

Yuki Mori, K. Ohyu, K. Okonogi et al. · 2006 · 59 citations

Engineering, Computer Engineering, Electrical Engineering +17

0.1 mu m CMOS devices using low-impurity-channel transistors (LICT)

Masashi Aoki, Tatsuya Ishii, Teizo Yoshimura et al. · 2002 · 44 citations

Engineering, Computer Engineering, Electrical Engineering +13

1–5 of 21