K. Ohyu

Hot-electron hardened Si-gate MOSFET utilizing F implantation

Yasushiro Nishioka, K. Ohyu, Yuzuru Ohji et al. · IEEE Electron Device Letters · 1989 · 104 citations

Semiconductors, Materials Science, Electrical Engineering +13

MeV-ion-induced damage in Si and its annealing

M. Tamura, Toshio Ando, K. Ohyu · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1991 · 94 citations

Ion Implantation, Engineering, Physics +5

Advantages of Fluorine Introduction in Boron Implanted Shallow p⁺/n-Junction Formation

K. Ohyu, Toshihiko Itoga, N. Natsuaki · Japanese Journal of Applied Physics · 1990 · 66 citations

Materials Science, Electrical Engineering, Semiconductor Device +12

The origin of variable retention time in DRAM

Yuki Mori, K. Ohyu, K. Okonogi et al. · 2006 · 59 citations

Electrical Engineering, Storage (Memory), Engineering +15

0.1 mu m CMOS devices using low-impurity-channel transistors (LICT)

Masashi Aoki, Tatsuya Ishii, Teizo Yoshimura et al. · 2002 · 44 citations

Low-power Electronics, Electrical Engineering, Electronic Devices +12