N. Natsuaki

MeV-energy B+, P+ and As+ ion implantation into Si

M. Tamura, N. Natsuaki, Yasuo Wada et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1987 · 93 citations

Mev-energy B+, Ion Implantation, Applied Physics +1

Advantages of Fluorine Introduction in Boron Implanted Shallow p⁺/n-Junction Formation

K. Ohyu, Toshihiko Itoga, N. Natsuaki · Japanese Journal of Applied Physics · 1990 · 66 citations

Materials Science, Electrical Engineering, Semiconductor Device +12

Observation of <i>p</i> <i>n</i> junctions on implanted silicon using a scanning tunneling microscope

Sumio Hosaka, Shigeyuki Hosoki, Keiji Takata et al. · Applied Physics Letters · 1988 · 60 citations

Engineering, Microscopy, Si Pn Junctions +20

Change of the electron effective mass in extremely heavily doped n-type Si obtained by ion implantation and laser annealing

Masanobu Miyao, Teruaki Motooka, N. Natsuaki et al. · Solid State Communications · 1981 · 59 citations

Ion Implantation, Engineering, Electron Effective Mass +7

Low-energy mass-separated ion beam deposition of materials

Takeshi Tokuyama, Kunihiro Yagi, Kiyoshi Miyake et al. · Nuclear Instruments and Methods · 1981 · 55 citations

Materials Engineering, Materials Science, Ion Implantation +4