M. Tamura

Si Bridging Epitaxy from Si Windows onto SiO₂by<i>Q</i>-Switched Ruby Laser Pulse Annealing

M. Tamura, Hiroshi Tamura, Takeshi Tokuyama · Japanese Journal of Applied Physics · 1980 · 98 citations

Materials Science, Photonics, Semiconductors +15

MeV-ion-induced damage in Si and its annealing

M. Tamura, Toshio Ando, K. Ohyu · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1991 · 94 citations

Ion Implantation, Engineering, Physics +5

MeV-energy B+, P+ and As+ ion implantation into Si

M. Tamura, N. Natsuaki, Yasuo Wada et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1987 · 93 citations

Mev-energy B+, Ion Implantation, Applied Physics +1

Lateral solid phase epitaxy of amorphous Si films on Si substrates with SiO2 patterns

Hiroshi Ishiwara, Hiroshi Yamamoto, Seijiro Furukawa et al. · Applied Physics Letters · 1983 · 76 citations

Materials Science, Semiconductors, Epitaxial Growth +15

Generation of Dislocations Induced by Chemical Vapor Deposited Si₃N₄Films on Silicon

M. Tamura, Hideo Sunami · Japanese Journal of Applied Physics · 1972 · 64 citations

Materials Science, Materials Engineering, Semiconductors +14