Seijiro Furukawa - Concepedia

Author

Seijiro Furukawa

Tokyo Institute of Technology

Also Known As

Seijiro FURUKAWA, Seijiro Furukawa, Seijiro Furukawa Seijiro Furukawa

Publications

698

Citations

H-Index

Concepts

All Affiliations

Tokyo Institute of Technology Hitachi (Japan)

About

Seijiro Furukawa is an author at Tokyo Institute of Technology specializing in applied physics, materials science, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	22	630
2	Applied Physics	15	22	630
3	Materials Science	15	20	595
4	Electrical Engineering	10	11	305
5	Materials Engineering	9	9	244

Seijiro Furukawa

Publications

630

Citations

H-Index

Page 1

	Year	Citations
Lateral solid phase epitaxy of amorphous Si films on Si substrates with SiO2 patterns Hiroshi Ishiwara, Hiroshi Yamamoto, Seijiro Furukawa, Applied Physics Letters Materials ScienceSemiconductorsEpitaxial GrowthEngineeringCrystalline Defects	1983	76
Formation of Uniform Solid-Phase Epitaxial CoSi<sub>2</sub> Films by Patterning Method Kouichirou Ishibashi, Seijiro Furukawa Japanese Journal of Applied Physics Materials EngineeringMaterials ScienceElectrical EngineeringCosi 2Engineering	1985	72
Electron-Beam Exposure(EBE) and Epitaxy of GaAs Films on CaF<sub>2</sub>/Si Structures Hee Chul Lee, Tanemasa Asano, Hiroshi Ishiwara, Japanese Journal of Applied Physics SemiconductorsMaterials ScienceElectrical EngineeringMaterials EngineeringEngineering	1988	51
Enhancement of lateral solid phase epitaxial growth in evaporated amorphous Si films by phosphorus implantation Hiroshi Yamamoto, Hiroshi Ishiwara, Seijiro Furukawa Applied Physics Letters Materials ScienceRandom CrystallizationEpitaxial GrowthOptical MaterialsEngineering	1985	47
Formation of GaAs-on-Insulator Structures on Si Substrates by Heteroepitaxial Growth of CaF<sub>2</sub> and GaAs Tanemasa Asano, Hiroshi Ishiwara, Hee Chul Lee, Japanese Journal of Applied Physics EngineeringHeteroepitaxial GrowthSemiconductor MaterialsSemiconductorsGaas Films	1986	44
Growth Conditions of Deposited Si Films in Solid Phase Epitaxy Shu‐ichi Saitoh, Toshihiro Sugii, Hiroshi Ishiwara, Japanese Journal of Applied Physics Materials ScienceSemiconductorsEpitaxial GrowthSitu Heat TreatmentEngineering	1981	42
On the Mechanisms of Lateral Solid Phase Epitaxial Growth of Amorphous Si Films Evaporated on SiO<sub>2</sub> Patterns Hiroshi Yamamoto, Hiroshi Ishiwara, Seijiro Furukawa Japanese Journal of Applied Physics Materials ScienceSio 2Epitaxial GrowthEngineeringPhysics	1985	30
A novel heteroepitaxy method of Ge films on CaF2 by electron beam exposure S. Kanemaru, Hiroshi Ishiwara, Seijiro Furukawa Journal of Applied Physics Materials ScienceEpitaxial GrowthEngineeringElectronic MaterialsElectron Beam	1988	27
Lateral solid phase epitaxy of amorphous Si films onto nonplanar SiO2 patterns on Si substrates Hiroshi Ishiwara, A. Tamba, Seijiro Furukawa Applied Physics Letters EngineeringAmorphous Si FilmsOptoelectronic DevicesSilicon On InsulatorSio2 Films	1986	26
Formation of Thick, Thermally-Stable High-Resistivity-Layers in GaAs by Oxygen Ion Implantation Tanemasa Asano, Rosen D. Atanassov, Hiroshi Ishiwara, Japanese Journal of Applied Physics SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering	1981	25

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