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0.1 mu m CMOS devices using low-impurity-channel transistors (LICT)
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2002
Year
Unknown Venue
Low-power ElectronicsElectrical EngineeringElectronic DevicesEngineeringVlsi DesignAdvanced Packaging (Semiconductors)MicrofabricationLow Threshold VoltagesSemiconductor Device FabricationFabrication CriteriaIntegrated CircuitsMicroelectronicsKey Process TechnologiesLow-impurity-channel TransistorsPower Electronic Devices
It was found that LICTs are very effective for providing low threshold voltages with good turn-offs in 0.1 mu m CMOS devices. Attention is given to device fabrication criteria, key process technologies used, and the features achieved using LICTs.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>