Yasushiro Nishioka

Promising storage capacitor structures with thin Ta/sub 2/O/sub 5/ film for low-power high-density DRAMs

H. Shinriki, T. Kisu, S. Kimura et al. · IEEE Transactions on Electron Devices · 1990 · 121 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +16

Dramatic improvement of hot-electron-induced interface degradation in MOS structures containing F or Cl in SiO/sub 2/

Yasushiro Nishioka, E.F. Da Silva, Yanzhuang Wang et al. · IEEE Electron Device Letters · 1988 · 120 citations

Materials Science, Hot-electron Damage, Engineering +12

Radiation Response of MOS Capacitors Containing Fluorinated Oxides

Eronides F. da Silva, Yasushiro Nishioka · IEEE Transactions on Nuclear Science · 1987 · 114 citations

Post-irradiation Defect-reaction Chemistry, Oxide Strain, Engineering +15

Hot-electron hardened Si-gate MOSFET utilizing F implantation

Yasushiro Nishioka, K. Ohyu, Yuzuru Ohji et al. · IEEE Electron Device Letters · 1989 · 104 citations

Semiconductors, Materials Science, Electrical Engineering +13

Leakage‐Current Increase in Amorphous Ta2 O 5 Films Due to Pinhole Growth during Annealing Below 600°C

Shin’ichiro Kimura, Yasushiro Nishioka, Akira Shintani et al. · Journal of The Electrochemical Society · 1983 · 81 citations

Materials Science, Materials Engineering, Pinhole Growth +15