UV-O/sub 3/ and dry-O/sub 2/: Two-step-annealed chemical vapor-deposited Ta/sub 2/O/sub 5/ films for storage dielectrics of 64-Mb DRAMs

H. Shinriki, Masami Nakata

IEEE Transactions on Electron Devices

EngineeringVacuum DevicePhotovoltaicsChemical EngineeringFirst Step +14

Promising storage capacitor structures with thin Ta/sub 2/O/sub 5/ film for low-power high-density DRAMs

H. Shinriki, T. Kisu, S. Kimura, +3

IEEE Transactions on Electron Devices

Non-volatile MemoryEngineeringEmerging Memory TechnologyStorage CapacitorInterconnect (Integrated Circuits) +14

Dielectric Characteristics of Double Layer Structure of Extremely Thin Ta2 O 5 / SiO2 on Si

Yasushiro Nishioka, Shin’ichiro Kimura, H. Shinriki, +1

Journal of The Electrochemical Society

EngineeringThin Film Process TechnologyDouble Layer StructureChemical DepositionSilicon On Insulator +18

Influence of SiO2 at the Ta2O5/Si interface on dielectric characteristics of Ta2O5 capacitors

Yasushiro Nishioka, H. Shinriki, Kiichiro Mukai

Journal of Applied Physics

Materials ScienceSio2 FilmElectrical EngineeringEngineeringOxide Electronics +10

Ultra-thin Ta₂O₅dielectric film for high-speed bipolar memories

Yasushiro Nishioka, N. Homma, H. Shinriki, +5

IEEE Transactions on Electron Devices

Materials ScienceElectrical EngineeringEngineeringElectronic MemorySurface Science +13

Two-step annealing technique for leakage current reduction in chemical-vapor-deposited Ta/sub 2/O/sub 5/ film

H. Shinriki, Masami Nakata, Yasushiro Nishioka, +1

IEEE Electron Device Letters

EngineeringIntegrated CircuitsThin Film Process TechnologyFirst StepNanoelectronics +15

Crown-shaped stacked-capacitor cell for 1.5-V operation 64-Mb DRAMs

T. Kaga, T. Kure, H. Shinriki, +8

IEEE Transactions on Electron Devices

Non-volatile MemoryElectrical EngineeringEngineeringAdvanced Packaging (Semiconductors)Microfabrication +12

Oxidized Ta/sub 2/O/sub 5//Si/sub 3/N/sub 4/ dielectric films on poly-crystalline Si for dRAMs

H. Shinriki, Yasushiro Nishioka, Yuzuru Ohji, +1

IEEE Transactions on Electron Devices

EngineeringDry OxidationThin Film Process TechnologySilicon On InsulatorDielectric Films +14

Conformal Chemical Vapor Deposition TiN(111) Film Formation as an Underlayer of Al for Highly Reliable Interconnects

Takeshi Kaizuka, H. Shinriki, Nobuyuki Takeyasu, +1

Japanese Journal of Applied Physics

Materials ScienceMaterials EngineeringChemical EngineeringAluminium NitrideEngineering +10

Ethanol‐Addition‐Enhanced, Chemical Vapor Deposited Tantalum Oxide Films from Ta (  OC 2 H 5 ) 5 and Oxygen Precursors

H. Shinriki, Masahito Sugiura, Yijun Liu, +2

Journal of The Electrochemical Society

H 5EngineeringOxygen PrecursorsChemistryChemical Deposition +14