K. Okonogi

The origin of variable retention time in DRAM

Yuki Mori, K. Ohyu, K. Okonogi et al. · 2006 · 59 citations

Electrical Engineering, Storage (Memory), Engineering +15

Single silicon vacancy-oxygen complex defect and variable retention time phenomenon in dynamic random access memories

T. Umeda, K. Okonogi, K. Ohyu et al. · Applied Physics Letters · 2006 · 33 citations · Full text

Non-volatile Memory, Electrical Engineering, Simulation Studies +13

Quantitative identification for the physical origin of variable retention time: A vacancy-oxygen complex defect model

K. Ohyu, T. Umeda, K. Okonogi et al. · 2006 · 20 citations

Non-volatile Memory, Engineering, Variable Retention Time +17

Electrically detected magnetic resonance of ion-implantation damage centers in silicon large-scale integrated circuits

T. Umeda, Yasunori Mochizuki, K. Okonogi et al. · Journal of Applied Physics · 2003 · 10 citations · Full text

Engineering, Magnetic Resonance, Integrated Circuits +17

Determining the relationship between local lattice strain and slip systems of dislocations around shallow trench isolation by convergent-beam electron diffraction

Akio Toda, Nobuyuki Ikarashi, Haruhiko Ono et al. · Applied Physics Letters · 2002 · 10 citations

Materials Science, Engineering, Other Slip Systems +14