Measurements and modeling of the n-channel MOSFET inversion layer mobility and device characteristics in the temperature range 60-300 K

Abstract

Discussed is the use of the high-frequency split C-V method to measure accurately the effective mobility of the n-channel MOS transistor as a function of temperature, bulk charge Q/sub b/, and inversion layer charge Q/sub i/. The experimental data for Q/sub b/ and Q/sub i/ were verified by comparison with the results of numerical simulation. The results of the measurements were used to develop the mobility model, which is accurate in the 60-300 K temperature range. The proposed mobility model incorporates Coulombic, lattice, and surface roughness scattering modes and generalizes the previous model, which was limited to low-temperature operation of the MOSFET. The deviation from the universal (for different back biases) mu (E/sub eff/) dependence, which becomes more pronounced at low temperatures and low E/sub eff/, is included in the model and can be associated with the Coulomb scattering mechanism. The proposed model is verified by comparison of experimental data and simulated MOSFET I-V characteristics for different temperatures.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>