Keiichi Hashimoto

Study on further reducing the epitaxial silicon temperature down to 250 °C in low-energy bias sputtering

Tadahiro Ohmi, Keiichi Hashimoto, Makoto Morita et al. · Journal of Applied Physics · 1991 · 48 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +16

Al-Si crystallographic-orientation transition in Al-Si/TiN layered structures and electromigration performance as interconnects

Hiroshi Onoda, Keiichi Hashimoto · Journal of Applied Physics · 1995 · 42 citations

Natural Sciences, Materials Engineering, Materials Science +17

Influence of silicon wafer surface roughness on semiconductor device characteristics

Keiichiro Mori, Shuichi Samata, Noritomo Mitsugi et al. · Japanese Journal of Applied Physics · 2020 · 42 citations · Full text

Engineering, Electrical Engineering, Materials Science +16

A simple method of detecting K-ras point mutations in stool samples for colorectal cancer screening using one-step polymerase chain reaction/restriction fragment length polymorphism analysis

Takashi Nishikawa, Kentaro Maemura, Ichiro Hirata et al. · Clinica Chimica Acta · 2002 · 41 citations

Medicine, Genetics, Molecular Genetics +17

Bias-induced structure transition in reactively sputtered TiN films

Keiichi Hashimoto, Hiroshi Onoda · Applied Physics Letters · 1989 · 29 citations

Natural Sciences, Materials Engineering, Materials Science +17