Charge trapping and detrapping in HfO2 high-κ gate stacks

High-κ gate dielectrics: Current status and materials properties considerations

G. D. Wilk, Robert M. Wallace, J. Anthony · Journal of Applied Physics · 2001 · 5.9K citations

Engineering, Materials Engineering, Materials Science +17

Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits

M. L. Green, E. P. Gusev, R. Degraeve et al. · Journal of Applied Physics · 2001 · 772 citations

Engineering, Materials Engineering, Materials Science +17

Ultrathin high-K metal oxides on silicon: processing, characterization and integration issues

E. P. Gusev, E. Cartier, D. A. Buchanan et al. · Microelectronic Engineering · 2001 · 386 citations

Natural Sciences, Materials Engineering, Materials Science +12

Charge trapping related threshold voltage instabilities in high permittivity gate dielectric stacks

Sufi Zafar, Alessandro Callegari, Evgeni Gusev et al. · Journal of Applied Physics · 2003 · 311 citations

Engineering, Electrical Engineering, Materials Science +17

Variation in the fixed charge density of SiOx/ZrO2 gate dielectric stacks during postdeposition oxidation

Michel Houssa, V. V. Afanas’ev, A. Stesmans et al. · Applied Physics Letters · 2000 · 193 citations · Full text

Engineering, Materials Engineering, Materials Science +17