Charge Trapping Effects

Charge Trapping Effects is a physical phenomenon in memristive materials wherein localized states within the dielectric or at interfaces immobilize charge carriers, thereby modulating the material’s resistance by altering the effective electric field and ion transport dynamics.

1K

Publications

46.7K

Citations

4.3K

Authors

867

Institutions

Publications per year

2017–2026

317

Authors

4.3K

  1. BK
    B. Kaczer

    IMEC, Belgium

    14 publications · 359 citations

    12

    h-index

  2. GG
    G. Groeseneken

    IMEC, Belgium

    12 publications · 378 citations

    11

    h-index

  3. HL
    Hang-Ting Lue

    Macronix International (Taiwan), Taiwan

    10 publications · 212 citations

    10

    h-index

  4. GB
    G. Bersuker

    The University of Texas at Austin, United States

    9 publications · 317 citations

    9

    h-index

  5. FD
    F. Driussi

    University of Udine, Italy

    9 publications · 308 citations

    9

    h-index

1–5 of 4.3K

Venues

  1. Journal of Applied Physics

    67 publications · 3.7K citations

    35

    h-index

  2. IEEE Transactions on Electron Devices

    83 publications · 3.6K citations

    33

    h-index

  3. Applied Physics Letters

    82 publications · 4.1K citations

    32

    h-index

  4. IEEE Electron Device Letters

    54 publications · 1.8K citations

    26

    h-index

  5. Advanced Functional Materials

    19 publications · 2K citations

    20

    h-index

1–5