F. Driussi

Mobility extraction in SOI MOSFETs with sub 1nm body thickness

M. Schmidt, Max C. Lemme, H.D.B. Gottlob et al. · Solid-State Electronics · 2009 · 79 citations · Full text

Electrical Engineering, Mobility Extraction, Engineering +5

Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells

Elisa Vianello, F. Driussi, A. Arreghini et al. · IEEE Transactions on Electron Devices · 2009 · 65 citations · Full text

Non-volatile Memory, Engineering, Vlsi Design +23

Long term charge retention dynamics of SONOS cells

A. Arreghini, N. Akil, F. Driussi et al. · Solid-State Electronics · 2008 · 61 citations · Full text

Engineering, Cell Division, Electrophysiology +9

Effects of Thermal Treatments on the Trapping Properties of HfO$_{2}$ Films for Charge Trap Memories

Sabina Spiga, F. Driussi, Alessio Lamperti et al. · Applied Physics Express · 2012 · 57 citations

Explanation of the Charge Trapping Properties of Silicon Nitride Storage Layers for NVMs—Part II: Atomistic and Electrical Modeling

Elisa Vianello, F. Driussi, P. Blaise et al. · IEEE Transactions on Electron Devices · 2011 · 54 citations · Full text

Non-volatile Memory, Engineering, Silicon On Insulator +17