Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells

Abstract

<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> A new characterization technique and an improved model for charge injection and transport through ONO gate stacks are used to investigate the program/retention sequence of silicon nitride-based (SONOS/TANOS) nonvolatile memories. The model accounts for drift–diffusion transport in the conduction band of silicon nitride (SiN). <emphasis emphasistype="boldital">A priori</emphasis> assumptions on the spatial distribution of the charge at the beginning of the program/retention operations are not needed. We show that the carrier transport in the SiN layer impacts the spatial distribution of the trapped charge and, consequently, several aspects of program and retention transients. A few model improvements allow us to reconcile the apparent discrepancy between the values of silicon nitride trap energies extracted from program and retention experiments, thus reducing the number of model parameters. </para>