A. Arreghini

Vertical Ferroelectric HfO<inf>2</inf> FET based on 3-D NAND Architecture: Towards Dense Low-Power Memory

Karine Florent, A. Subirats, Kaustuv Banerjee et al. · 2018 · 155 citations

Engineering, Computer Engineering, Electrical Engineering +16

Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells

Elisa Vianello, F. Driussi, A. Arreghini et al. · IEEE Transactions on Electron Devices · 2009 · 65 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Long term charge retention dynamics of SONOS cells

A. Arreghini, N. Akil, F. Driussi et al. · Solid-State Electronics · 2008 · 61 citations · Full text

Engineering, Biology, Electrochemical Engineering +11

Comprehensive investigation of the impact of lateral charge migration on retention performance of planar and 3D SONOS devices

Alessandro Maconi, A. Arreghini, Christian Monzio Compagnoni et al. · Solid-State Electronics · 2012 · 54 citations

Engineering, Electrical Engineering, Materials Science +17

Highly Scaled Vertical Cylindrical SONOS Cell With Bilayer Polysilicon Channel for 3-D nand Flash Memory

G. Van den bosch, Gouri Sankar Kar, Pieter Blomme et al. · IEEE Electron Device Letters · 2011 · 46 citations

Engineering, Computer Engineering, Electrical Engineering +17