Comprehensive investigation of the impact of lateral charge migration on retention performance of planar and 3D SONOS devices

Alessandro Maconi, A. Arreghini, Christian Monzio Compagnoni, +4

Solid-State Electronics

Electrical EngineeringSemiconductor DeviceEngineeringAdvanced Packaging (Semiconductors)Nanoelectronics +7

Semi-Analytical Model for the Transient Operation of Gate-All-Around Charge-Trap Memories

Salvatore Amoroso, Christian Monzio Compagnoni, Aurelio Giancarlo Mauri, +3

IEEE Transactions on Electron Devices

Device ModelingSemiconductorsElectrical EngineeringElectronic DevicesGaa Cell +12

Physical Modeling for Programming of TANOS Memories in the Fowler–Nordheim Regime

Christian Monzio Compagnoni, Aurelio Giancarlo Mauri, Salvatore Amoroso, +2

IEEE Transactions on Electron Devices

Comprehensive Investigation of Statistical Effects in Nitride Memories—Part I: Physics-Based Modeling

Aurelio Giancarlo Mauri, Christian Monzio Compagnoni, Salvatore Amoroso, +4

IEEE Transactions on Electron Devices

EngineeringComprehensive InvestigationCharge TransportSemiconductor DeviceNanoelectronics +15

Impact of lateral charge migration on the retention performance of planar and 3D SONOS devices

Alessandro Maconi, A. Arreghini, Christian Monzio Compagnoni, +4

EngineeringEmerging Memory TechnologyPlanar Sonos DevicesIntegrated CircuitsSemiconductor Device +15

Three-Dimensional Simulation of Charge-Trap Memory Programming—Part I: Average Behavior

Salvatore Amoroso, Alessandro Maconi, Aurelio Giancarlo Mauri, +3

IEEE Transactions on Electron Devices

Localized NatureNon-volatile MemoryEngineeringComputer ArchitectureSimulation +16

3D Monte Carlo simulation of the programming dynamics and their statistical variability in nanoscale charge-trap memories

Salvatore Amoroso, Alessandro Maconi, Aurelio Giancarlo Mauri, +8

Non-volatile MemoryEngineeringMonte Carlo MethodsComputational ChemistryNanoelectronics +19

A new physics-based model for TANOS memories program/erase

Aurelio Giancarlo Mauri, Christian Monzio Compagnoni, Salvatore Amoroso, +5

Hardware SecurityNon-volatile MemoryElectrical EngineeringProgram/erase TransientsTanos Technology +10

Comprehensive Investigation of Statistical Effects in Nitride Memories—Part II: Scaling Analysis and Impact on Device Performance

Christian Monzio Compagnoni, Salvatore Amoroso, Alessandro Maconi, +3

IEEE Transactions on Electron Devices

EngineeringEmerging Memory TechnologyComputer ArchitectureComprehensive InvestigationCharge Transport +16

Reliability constraints for TANOS memories due to alumina trapping and leakage

Salvatore Amoroso, Aurelio Giancarlo Mauri, N. Galbiati, +12

Non-volatile MemoryEngineeringEmerging Memory TechnologyComputer ArchitectureTanos Memories +14