Aurelio Giancarlo Mauri

Author

Also Known As

A G Mauri, A. G. Mauri, A. Mauri, A.G. Mauri, Aurelio G. Mauri, Aurelio Giancarlo Mauri, Aurelio Mauri, Mauri, A., Mauri, Aurelio, Mauri, Aurelio G.

Publications

473

Citations

H-Index

Concepts

All Affiliations

Politecnico di Milano Micron (Italy)Istituto di Fotonica e Nanotecnologie Micron (United States)

About

Aurelio Giancarlo Mauri is an author at Politecnico di Milano specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	13	13	321
2	Applied Physics	12	12	306
3	Electrical Engineering	12	12	284
4	Computer Engineering	4	4	66
5	Natural Sciences	1	1	17

Aurelio Giancarlo Mauri

Publications

362

Citations

H-Index

Page 1

	Year	Citations
Semi-Analytical Model for the Transient Operation of Gate-All-Around Charge-Trap Memories Salvatore Amoroso, Christian Monzio Compagnoni, Aurelio Giancarlo Mauri, IEEE Transactions on Electron Devices Device ModelingSemiconductorsElectrical EngineeringElectronic DevicesGaa Cell	2011	44
Atomic migration in phase change materials Giovanni Novielli, A. Ghetti, E. Varesi, Phase TransitionsAtomic MigrationEngineeringPhase Change MemoryNanoscale Modeling	2013	37
3D finite element modeling and simulation of industrial semiconductor devices including impact ionization Aurelio Giancarlo Mauri, Andrea Bortolossi, Giovanni Novielli, Journal of Mathematics in Industry EngineeringFinite Element ModelingGalerkin Fe ApproximationComputer-aided DesignComputational Mechanics	2015	37
Physical Modeling for Programming of TANOS Memories in the Fowler–Nordheim Regime Christian Monzio Compagnoni, Aurelio Giancarlo Mauri, Salvatore Amoroso, IEEE Transactions on Electron Devices	2009	31
Impact of Nonuniform Doping on Random Telegraph Noise in Flash Memory Devices A. Ghetti, Salvatore Amoroso, Aurelio Giancarlo Mauri, IEEE Transactions on Electron Devices Nonuniform DopingNon-volatile MemoryElectrical EngineeringFlash Memory DevicesChannel Surface	2011	29
Comprehensive Investigation of Statistical Effects in Nitride Memories—Part I: Physics-Based Modeling Aurelio Giancarlo Mauri, Christian Monzio Compagnoni, Salvatore Amoroso, IEEE Transactions on Electron Devices EngineeringComprehensive InvestigationCharge TransportSemiconductor DeviceNanoelectronics	2010	26
Electro-thermo-chemical computational models for 3D heterogeneous semiconductor device simulation Aurelio Giancarlo Mauri, Riccardo Sacco, Maurizio Verri Applied Mathematical Modelling Device ModelingElectrical EngineeringEngineeringMaterial SimulationApplied Physics	2014	24
Three-Dimensional Electrostatics- and Atomistic Doping-Induced Variability of RTN Time Constants in Nanoscale MOS Devices—Part II: Spectroscopic Implications Christian Monzio Compagnoni, N. Castellani, Aurelio Giancarlo Mauri, IEEE Transactions on Electron Devices EngineeringRtn Time ConstantsAtomistic DopingCharge TransportOxide Traps	2012	23
Three-Dimensional Simulation of Charge-Trap Memory Programming—Part I: Average Behavior Salvatore Amoroso, Alessandro Maconi, Aurelio Giancarlo Mauri, IEEE Transactions on Electron Devices Localized NatureNon-volatile MemoryEngineeringComputer ArchitectureSimulation	2011	21
Three-Dimensional Electrostatics- and Atomistic Doping-Induced Variability of RTN Time Constants in Nanoscale MOS Devices—Part I: Physical Investigation N. Castellani, Christian Monzio Compagnoni, Aurelio Giancarlo Mauri, IEEE Transactions on Electron Devices EngineeringRtn Time ConstantsAtomistic DopingSemiconductor DeviceSemiconductor Nanostructures	2012	19

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