G. Van den bosch

Spectroscopic charge pumping: A new procedure for measuring interface trap distributions on MOS transistors

G. Van den bosch, G. Groeseneken, Paul Heremans et al. · IEEE Transactions on Electron Devices · 1991 · 120 citations

Device Modeling, Semiconductors, Electrical Engineering +15

Characterization of Total Safe Operating Area of Lateral DMOS Transistors

P. Moens, G. Van den bosch · IEEE Transactions on Device and Materials Reliability · 2006 · 110 citations

Device Modeling, Electrical Engineering, 40-V Ldmos +11

Temperature dependence of the channel hot-carrier degradation of n-channel MOSFET's

Paul Heremans, G. Van den bosch, R. Bellens et al. · IEEE Transactions on Electron Devices · 1990 · 101 citations

Semiconductors, Device Modeling, Electrical Engineering +15

On the geometric component of charge-pumping current in MOSFETs

G. Van den bosch, G. Groeseneken, H.E. Maes · IEEE Electron Device Letters · 1993 · 84 citations

Device Modeling, Electrical Engineering, Nearby Junction +6

Hot carrier degradation and time-dependent dielectric breakdown in oxides

G. Groeseneken, R. Degraeve, T. Nigam et al. · Microelectronic Engineering · 1999 · 67 citations

Electrical Engineering, Engineering, Hot Carrier Degradation +5