T. Nigam

Soft breakdown of ultra-thin gate oxide layers

Michel Depas, T. Nigam, Marc Heyns · IEEE Transactions on Electron Devices · 1996 · 323 citations

Materials Science, Materials Engineering, Electrical Engineering +15

Model for the current–voltage characteristics of ultrathin gate oxides after soft breakdown

Michel Houssa, T. Nigam, Paul Mertens et al. · Journal of Applied Physics · 1998 · 118 citations

Device Modeling, Electrical Engineering, Engineering +11

Accurate model for time-dependent dielectric breakdown of high-k metal gate stacks

T. Nigam, A. Kerber, Peter Peumans · IEEE International Reliability Physics Symposium proceedings · 2009 · 114 citations

Device Modeling, Defect Tolerance, Electrical Engineering +13

On the properties of the gate and substrate current after soft breakdown in ultrathin oxide layers

Felice Crupi, R. Degraeve, G. Groeseneken et al. · IEEE Transactions on Electron Devices · 1998 · 97 citations

Materials Science, Device Modeling, Electrical Engineering +14

Soft breakdown in ultrathin gate oxides: Correlation with the percolation theory of nonlinear conductors

Michel Houssa, T. Nigam, Paul Mertens et al. · Applied Physics Letters · 1998 · 91 citations

Engineering, Nanoelectronics, Nonlinear Conductors +17