Hang-Ting Lue - Concepedia

Author

Hang-Ting Lue

Also Known As

H T Lue, H. T. Lue, H.-T. Lue, H.T. Lue, Hang Lue, Hang Ting Lue, Hang-Ting Lue, Hang-ting Lue, HangTing Lue, Hsin-Te Lue

192

Publications

2.8K

Citations

H-Index

Concepts

All Affiliations

Macronix International (Taiwan)National Tsing Hua University National Yang Ming Chiao Tung University Macronix International (China)National Institutes of Applied Research

About

Hang-Ting Lue is an author at Macronix International (Taiwan) specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	26	70	2.1K
2	Applied Physics	24	55	1.7K
3	Business	1	1	19
4	Social Sciences	1	1	10
5	Biomedical Engineering	1	1	25

Hang-Ting Lue

Publications

2.5K

Citations

H-Index

Page 1

	Year	Citations
Device modeling of ferroelectric memory field-effect transistor (FeMFET) Hang-Ting Lue, Chien-Jang Wu, Tseung‐Yuen Tseng IEEE Transactions on Electron Devices Device ModelingMagnetismElectrical EngineeringNumerical AnalysisEngineering	2002	164
BE-SONOS: A bandgap engineered SONOS with excellent performance and reliability Hang-Ting Lue, Szu-Yu Wang, Erh-Kun Lai, SemiconductorsNon-volatile MemoryElectrical EngineeringElectronic DevicesEngineering	2006	134
A highly scalable 8-layer 3D vertical-gate (VG) TFT NAND Flash using junction-free buried channel BE-SONOS device Hang-Ting Lue, Tzu‐Hsuan Hsu, Yi‐Hsuan Hsiao,	2010	104
Optimal Design Methods to Transform 3D NAND Flash into a High-Density, High-Bandwidth and Low-Power Nonvolatile Computing in Memory (nvCIM) Accelerator for Deep-Learning Neural Networks (DNN) Hang-Ting Lue, Po-Kai Hsu, Ming‐Liang Wei, Non-volatile MemoryElectrical EngineeringOptimal Design MethodsEngineeringHardware Acceleration	2019	80
A Multi-Layer Stackable Thin-Film Transistor (TFT) NAND-Type Flash Memory Erh-Kun Lai, Hang-Ting Lue, Yi‐Hsuan Hsiao, Non-volatile MemoryEngineeringEmerging Memory TechnologyComputer ArchitectureBottom Layer	2006	70
Device modeling of ferroelectric memory field-effect transistor for the application of ferroelectric random access memory Hang-Ting Lue, Chien-Jang Wu, Tseung‐Yuen Tseng IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control Device ModelingMagnetismElectrical EngineeringNon-volatile MemoryEngineering	2003	65
A critical examination of 3D stackable NAND Flash memory architectures by simulation study of the scaling capability Yi‐Hsuan Hsiao, Hang-Ting Lue, Tzu‐Hsuan Hsu,	2010	63
An improved two-frequency method of capacitance measurement for SrTiO<sub>3</sub> as high-k gate dielectric Hang-Ting Lue, Chih‐Yi Liu, Tseung‐Yuen Tseng IEEE Electron Device Letters Gate DielectricsElectrical EngineeringHigh-k Gate DielectricEngineeringHigh-frequency Device	2002	63
Radically extending the cycling endurance of Flash memory (to &#x003E; 100M Cycles) by using built-in thermal annealing to self-heal the stress-induced damage Hang-Ting Lue, Pei-Ying Du, Chih‐Ping Chen, Non-volatile MemoryEngineeringTunnel OxideEmerging Memory TechnologyComputer Architecture	2012	59
study of incremental step pulse programming (ISPP) and STI edge effect of BE-SONOS NAND Flash Hang-Ting Lue, Tzu-Hsuan Hsu, Szu-Yu Wang, Electrical EngineeringEngineeringVlsi DesignIncremental StepFlash Memory	2008	58

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