Erh-Kun Lai

Phase change materials and their application to random access memory technology

Simone Raoux, R. M. Shelby, Jean Jordan‐Sweet et al. · Microelectronic Engineering · 2008 · 152 citations

Materials Science, Materials Engineering, Non-volatile Memory +11

BE-SONOS: A bandgap engineered SONOS with excellent performance and reliability

Hang-Ting Lue, Szu-Yu Wang, Erh-Kun Lai et al. · 2006 · 134 citations

Semiconductors, Non-volatile Memory, Electrical Engineering +13

Unipolar Switching Behaviors of RTO $\hbox{WO}_{X}$ RRAM

Wei-Chih Chien, Y.C. Chen, Erh-Kun Lai et al. · IEEE Electron Device Letters · 2010 · 108 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +18

A high performance phase change memory with fast switching speed and high temperature retention by engineering the Ge<inf>x</inf>Sb<inf>y</inf>Te<inf>z</inf> phase change material

Huai‐Yu Cheng, T. H. Hsu, Simone Raoux et al. · 2011 · 77 citations

Engineering, Computer Architecture, Phase Change Memory +17

A forming-free WO<inf>x</inf> resistive memory using a novel self-aligned field enhancement feature with excellent reliability and scalability

Wei-Chih Chien, Y.R. Chen, Y.C. Chen et al. · 2010 · 74 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +18