Erh-Kun Lai - Concepedia

Author

Erh-Kun Lai

Macronix International (Taiwan)

Also Known As

E Lai, E. K. Lai, E. Lai, E.-K. Lai, E.K. Lai, E.k. Lai, Erh-Kun Lai, Erh-Kun. Lai, Erh-kun Lai, Eric Tsz-Him Lai

107

Publications

Citations

H-Index

Concepts

All Affiliations

Macronix International (Taiwan)National Tsing Hua University IBM Research - Thomas J. Watson Research Center National Yang Ming Chiao Tung University IBM (United States)

About

Erh-Kun Lai is an author at Macronix International (Taiwan) specializing in electrical engineering, applied physics, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	22	51	1.7K
2	Applied Physics	22	44	1.5K
3	Medicine	1	1	20
4	Social Sciences	1	1	10
5	Biomedical Engineering	1	1	52

Erh-Kun Lai

Publications

1.8K

Citations

H-Index

Page 1

	Year	Citations
Phase change materials and their application to random access memory technology Simone Raoux, R. M. Shelby, Jean Jordan‐Sweet, Microelectronic Engineering Materials ScienceMaterials EngineeringNon-volatile MemoryEngineeringPhase Change Materials	2008	152
BE-SONOS: A bandgap engineered SONOS with excellent performance and reliability Hang-Ting Lue, Szu-Yu Wang, Erh-Kun Lai, SemiconductorsNon-volatile MemoryElectrical EngineeringElectronic DevicesEngineering	2006	134
Unipolar Switching Behaviors of RTO $\hbox{WO}_{X}$ RRAM Wei-Chih Chien, Y.C. Chen, Erh-Kun Lai, IEEE Electron Device Letters Non-volatile MemoryEngineeringEmerging Memory TechnologyPhase Change MemoryElectronic Devices	2010	108
A high performance phase change memory with fast switching speed and high temperature retention by engineering the Ge<inf>x</inf>Sb<inf>y</inf>Te<inf>z</inf> phase change material Huai‐Yu Cheng, T. H. Hsu, Simone Raoux, EngineeringComputer ArchitecturePhase Change MemoryNew MaterialMemory Devices	2011	77
A forming-free WO<inf>x</inf> resistive memory using a novel self-aligned field enhancement feature with excellent reliability and scalability Wei-Chih Chien, Y.R. Chen, Y.C. Chen, Non-volatile MemoryEngineeringEmerging Memory TechnologyComputer ArchitectureForming-free Wo	2010	74
A Multi-Layer Stackable Thin-Film Transistor (TFT) NAND-Type Flash Memory Erh-Kun Lai, Hang-Ting Lue, Yi‐Hsuan Hsiao, Non-volatile MemoryEngineeringEmerging Memory TechnologyComputer ArchitectureBottom Layer	2006	70
study of incremental step pulse programming (ISPP) and STI edge effect of BE-SONOS NAND Flash Hang-Ting Lue, Tzu-Hsuan Hsu, Szu-Yu Wang, Electrical EngineeringEngineeringVlsi DesignIncremental StepFlash Memory	2008	58
A Highly Reliable Self-Aligned Graded Oxide WO<inf>x</inf> Resistance Memory: Conduction Mechanisms and Reliability ChiaHua Ho, Erh-Kun Lai, M. D. Lee, Non-volatile MemoryEngineeringEmerging Memory TechnologyPhase Change MemoryPlasmas Oxidation	2007	54
Endurance Improvement of Ge2Sb2Te5-Based Phase Change Memory Chieh-Fang Chen, A. G. Schrott, M. H. Lee, Materials EngineeringElectrical EngineeringEngineeringElectronic MemoryComputer Engineering	2009	53
A Study on OTS-PCM Pillar Cell for 3-D Stackable Memory Wei-Chih Chien, C. W. Yeh, Robert L. Bruce, IEEE Transactions on Electron Devices Non-volatile MemoryEngineeringEmerging Memory TechnologyPillar DeviceComputer Architecture	2018	52

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