Huai‐Yu Cheng - Concepedia

Author

Huai‐Yu Cheng

Also Known As

H. Cheng, H. Y. Cheng, H.-Y. Cheng, H.Y. Cheng, Haiyong Cheng, Haogang Cheng, Hengdang Cheng, Hsiang-Han CHENG, Huai-Yu Cheng, Huai‐Yu Cheng

Publications

2.2K

Citations

H-Index

Concepts

All Affiliations

Macronix International (Taiwan)IBM (United States)IBM Research - Thomas J. Watson Research Center IBM Research - Almaden National Tsing Hua University

About

Huai‐Yu Cheng is an author at Macronix International (Taiwan) specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	23	39	1.5K
2	Applied Physics	22	33	1.4K
3	Computer Engineering	11	11	242
4	Biomedical Engineering	1	1	52
5	Chemical Engineering	1	1	16

Huai‐Yu Cheng

Publications

Citations

H-Index

Page 1

	Year	Citations
Recent Progress in Phase-ChangeMemory Technology Geoffrey W. Burr, M. BrightSky, Abu Sebastian, IEEE Journal on Emerging and Selected Topics in Circuits and Systems	2016	372
Crystallization times of Ge–Te phase change materials as a function of composition Simone Raoux, Huai‐Yu Cheng, Marissa A. Caldwell, Applied Physics Letters Materials ScienceMaterials EngineeringCrystallization TimeEngineeringCrystalline Defects	2009	130
3D cross-point phase-change memory for storage-class memory Huai‐Yu Cheng, Fabio Carta, Wei-Chih Chien, Journal of Physics D Applied Physics	2019	103
Influence of interfaces and doping on the crystallization temperature of Ge–Sb Simone Raoux, Huai‐Yu Cheng, Jean Jordan‐Sweet, Applied Physics Letters Materials ScienceMaterials EngineeringHigh Temperature MaterialsCrystallization TemperatureEngineering	2009	80
A high performance phase change memory with fast switching speed and high temperature retention by engineering the Ge<inf>x</inf>Sb<inf>y</inf>Te<inf>z</inf> phase change material Huai‐Yu Cheng, T. H. Hsu, Simone Raoux, EngineeringComputer ArchitecturePhase Change MemoryNew MaterialMemory Devices	2011	77
Phase transitions in Ge–Te phase change materials studied by time-resolved x-ray diffraction Simone Raoux, Becky Muñoz, Huai‐Yu Cheng, Applied Physics Letters Phase TransitionsEngineeringThin Film Process TechnologyGradual TransitionMaterial Physic	2009	73
ALD-based confined PCM with a metallic liner toward unlimited endurance W. Kim, M. BrightSky, Takeshi Masuda, Non-volatile MemoryEngineeringEmerging Memory TechnologyUnlimited EnduranceMetallic Liner	2016	70
Wet etching of Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub>films and switching properties of resultant phase change memory cells Huai‐Yu Cheng, Chao An Jong, Ren‐Jei Chung, Semiconductor Science and Technology Materials ScienceNon-volatile MemoryGe2sb2te5 Thin FilmsEngineeringCrystalline Defects	2005	63
The impact of film thickness and melt-quenched phase on the phase transition characteristics of Ge2Sb2Te5 Huai‐Yu Cheng, Simone Raoux, Yi‐Chou Chen Journal of Applied Physics Optical MaterialsPhase Transition CharacteristicsEngineeringCrystal Growth TechnologyLaser Applications	2010	57
Physical parameters affecting sonoluminescence: A self-consistent hydrodynamic study Li Yuan, Huai‐Yu Cheng, M.-C. Chu, Physical review. E, Statistical physics, plasmas, fluids, and related interdisciplinary topics EngineeringFluid MechanicsMechanical EngineeringSonoluminescenceSoft Matter	1998	52

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