M. BrightSky - Concepedia

Author

M. BrightSky

IBM Research - Thomas J. Watson Research Center

Also Known As

BrightSky, M., BrightSky, Matthew, M. BrightSky, M. Brightsky, M. J. BrightSky, Matthew BrightSky, Matthew Brightsky, Matthew J BrightSky, Matthew J. BrightSky

Publications

2.5K

Citations

H-Index

Concepts

All Affiliations

IBM Research - Thomas J. Watson Research Center Macronix International (Taiwan)IBM (United States)IBM Research - Almaden IBM Research - Zurich

About

M. BrightSky is an author at IBM Research - Thomas J. Watson Research Center specializing in engineering, electrical engineering, and computer engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	22	37	1.8K
2	Applied Physics	17	21	744
3	Social Sciences	5	5	760
4	Medicine	1	1	70
5	Biomedical Engineering	1	1	52

M. BrightSky

Publications

2.3K

Citations

H-Index

Page 1

	Year	Citations
Recent Progress in Phase-ChangeMemory Technology Geoffrey W. Burr, M. BrightSky, Abu Sebastian, IEEE Journal on Emerging and Selected Topics in Circuits and Systems	2016	372
Tutorial: Brain-inspired computing using phase-change memory devices Abu Sebastian, Manuel Le Gallo, Geoffrey W. Burr, Journal of Applied Physics EngineeringComputer ArchitectureSocial SciencesBrain-inspired SensorsUnconventional Computing	2018	294
Brain-like associative learning using a nanoscale non-volatile phase change synaptic device array Sukru Burc Eryilmaz, Duygu Kuzum, Rakesh Jeyasingh, Frontiers in Neuroscience EngineeringNeural RecodingCircuit NeuroscienceNeurochipSocial Sciences	2014	204
NVM neuromorphic core with 64k-cell (256-by-256) phase change memory synaptic array with on-chip neuron circuits for continuous in-situ learning Sang‐Bum Kim, Masatoshi Ishii, S.H. Lewis, EngineeringComputer ArchitectureContinuous In-situ LearningPhase Change MemoryNeurochip	2015	191
3D cross-point phase-change memory for storage-class memory Huai‐Yu Cheng, Fabio Carta, Wei-Chih Chien, Journal of Physics D Applied Physics	2019	103
Large-scale (512kbit) integration of multilayer-ready access-devices based on mixed-ionic-electronic-conduction (MIEC) at 100% yield Geoffrey W. Burr, Kumar Virwani, Rohit S. Shenoy, Non-volatile MemoryEngineeringDevice IntegrationEmerging Memory TechnologyIntegrated Circuits	2012	71
ALD-based confined PCM with a metallic liner toward unlimited endurance W. Kim, M. BrightSky, Takeshi Masuda, Non-volatile MemoryEngineeringEmerging Memory TechnologyUnlimited EnduranceMetallic Liner	2016	70
Confined PCM-based Analog Synaptic Devices offering Low Resistance-drift and 1000 Programmable States for Deep Learning W. Kim, Robert L. Bruce, Takeshi Masuda, EngineeringAnalog DesignProgrammable StatesPhase Change MemoryNeurochip	2019	70
Sub-30nm scaling and high-speed operation of fully-confined Access-Devices for 3D crosspoint memory based on mixed-ionic-electronic-conduction (MIEC) materials Kumar Virwani, Geoffrey W. Burr, Rohit S. Shenoy, Non-volatile MemoryEngineeringEmerging Memory TechnologyCrosspoint MemoryAdvanced Technology Nodes	2012	63
MIEC (mixed-ionic-electronic-conduction)-based access devices for non-volatile crossbar memory arrays Rohit S. Shenoy, Geoffrey W. Burr, Kumar Virwani, Semiconductor Science and Technology Non-volatile MemoryEngineeringMemristive DevicesEmerging Memory TechnologyComputer Architecture	2014	54

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