IEEE Electron Device Letters · 2001 · 13 citations · 11 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesChemical Vapor DepositionMetal-oxide-semiconductor Field-effect TransistorsSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor ReliabilitySemiconductor Thin FilmsEquivalent Oxide ThicknessGate Dielectric EngineeringGate DielectricsGate LeakageGate Leakage CurrentGate OxidesLow-pressure Chemical Vapor DepositionNitride Thin Films
Ultrathin nitride/oxide (N/O) gate dielectric stacks with equivalent oxide thickness of 1.6 nm have been fabricated by combining remote plasma nitridation (RPN) and low pressure chemical vapor deposition (LPCVD) technologies. NMOSFETs with these gate stacks exhibit good interface properties, improved subthreshold characteristics, low off-state currents, enhanced reliability, and about one order of magnitude reduction in gate leakage current to their oxide counterparts.
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