J. J. Wortman - Concepedia

Author

J. J. Wortman

North Carolina State University

Also Known As

J. J. WORTMAN, J. J. Wortman, J. J. Wortman., J. Wortman, J.J Wortman, J.J. WORTMAN, J.J. Wortman, Justin Wortman

163

Publications

4.5K

Citations

H-Index

103

Concepts

All Affiliations

North Carolina State University RTI International Advanced Micro Devices (United States)University of North Carolina at Chapel Hill MCNC Research and Development Institute

About

J. J. Wortman is an author at North Carolina State University specializing in engineering, applied physics, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	32	60	4.3K
2	Applied Physics	30	55	4.1K
3	Chemistry	2	2	30
4	Education	1	1	64
5	Chemical Engineering	1	1	57

J. J. Wortman

Publications

4.3K

Citations

H-Index

Page 1

	Year	Citations
Young's Modulus, Shear Modulus, and Poisson's Ratio in Silicon and Germanium J. J. Wortman, Russell Evans Journal of Applied Physics Crystal StructureEngineeringMechanical EngineeringSilicon On InsulatorElasticity (Physics)	1965	1.3K
Modeling study of ultrathin gate oxides using direct tunneling current and capacitance-voltage measurements in MOS devices Ni Yang, W.K. Henson, John R. Hauser, IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringMos DevicesEngineeringUltrathin Gate Oxides	1999	230
Effect of Mechanical Stress on <i>p-n</i> Junction Device Characteristics J. J. Wortman, John R. Hauser, Richard M. Burger Journal of Applied Physics Device ModelingSemiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineering	1964	179
Modeled tunnel currents for high dielectric constant dielectrics Eric M. Vogel, Khaled Ahmed, B. Hornung, IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringTunnel CurrentsEngineeringDielectric Constant	1998	163
Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional capacitance-voltage measurements on MOS capacitors W.K. Henson, Khaled Ahmed, Eric M. Vogel, IEEE Electron Device Letters Materials EngineeringHigh-frequency Capacitance-voltageElectrical EngineeringEngineeringTunneling Microscopy	1999	162
Modeling Rapid Thermal Diffusion of Arsenic and Boron in Silicon Richard B. Fair, J. J. Wortman, J. Liu Journal of The Electrochemical Society Point DefectsEngineeringSilicon On InsulatorDefect ToleranceSemiconductors	1984	157
Optimization of the germanium preamorphization conditions for shallow-junction formation Mehmet C. Öztürk, J. J. Wortman, C. M. Osburn, IEEE Transactions on Electron Devices Materials ScienceIon ImplantationEngineeringGermanium Preamorphization ConditionsApplied Physics	1988	116
Analysis of leakage currents and impact on off-state power consumption for CMOS technology in the 100-nm regime W.K. Henson, Ni Yang, Stefan Kubicek, IEEE Transactions on Electron Devices EngineeringVlsi DesignOff-state Leakage CurrentsPower ElectronicsLeakage Mechanisms	2000	115
A comparative study of gate direct tunneling and drain leakage currents in n-MOSFET's with sub-2 nm gate oxides Ni Yang, W.K. Henson, J. J. Wortman IEEE Transactions on Electron Devices Device ModelingGate Direct TunnelingElectrical EngineeringEngineeringNanoelectronics	2000	106
Residual defects following rapid thermal annealing of shallow boron and boron fluoride implants into preamorphized silicon C. Carter, W. Maszara, D. K. Sadana, Applied Physics Letters EngineeringSilicon On InsulatorDefect ToleranceSemiconductorsLiquid Nitrogen	1984	103

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