J. J. Wortman

Young's Modulus, Shear Modulus, and Poisson's Ratio in Silicon and Germanium

J. J. Wortman, Russell Evans · Journal of Applied Physics · 1965 · 1.3K citations

Crystal Structure, Engineering, Mechanical Engineering +20

Modeling study of ultrathin gate oxides using direct tunneling current and capacitance-voltage measurements in MOS devices

Ni Yang, W.K. Henson, John R. Hauser et al. · IEEE Transactions on Electron Devices · 1999 · 230 citations

Device Modeling, Electrical Engineering, Mos Devices +13

Effect of Mechanical Stress on <i>p-n</i> Junction Device Characteristics

J. J. Wortman, John R. Hauser, Richard M. Burger · Journal of Applied Physics · 1964 · 179 citations

Device Modeling, Semiconductor Technology, Electrical Engineering +14

Modeled tunnel currents for high dielectric constant dielectrics

Eric M. Vogel, Khaled Ahmed, B. Hornung et al. · IEEE Transactions on Electron Devices · 1998 · 163 citations

Device Modeling, Electrical Engineering, Tunnel Currents +13

Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional capacitance-voltage measurements on MOS capacitors

W.K. Henson, Khaled Ahmed, Eric M. Vogel et al. · IEEE Electron Device Letters · 1999 · 162 citations

Materials Engineering, High-frequency Capacitance-voltage, Electrical Engineering +13