Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional capacitance-voltage measurements on MOS capacitors

Abstract

High-frequency capacitance-voltage (C-V) measurements have been made on ultrathin oxide metal-oxide-semiconductor (MOS) capacitors. The sensitivity of extracted oxide thickness to series resistance and gate leakage is demonstrated. Guidelines are outlined for reliable and accurate estimation of oxide thickness from C-V measurements for oxides down to 1.4 nm.