W.K. Henson

Modeling study of ultrathin gate oxides using direct tunneling current and capacitance-voltage measurements in MOS devices

Ni Yang, W.K. Henson, John R. Hauser et al. · IEEE Transactions on Electron Devices · 1999 · 230 citations

Device Modeling, Electrical Engineering, Mos Devices +13

Modeled tunnel currents for high dielectric constant dielectrics

Eric M. Vogel, Khaled Ahmed, B. Hornung et al. · IEEE Transactions on Electron Devices · 1998 · 163 citations

Device Modeling, Electrical Engineering, Tunnel Currents +13

Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional capacitance-voltage measurements on MOS capacitors

W.K. Henson, Khaled Ahmed, Eric M. Vogel et al. · IEEE Electron Device Letters · 1999 · 162 citations

Materials Engineering, High-frequency Capacitance-voltage, Electrical Engineering +13

Analysis of leakage currents and impact on off-state power consumption for CMOS technology in the 100-nm regime

W.K. Henson, Ni Yang, Stefan Kubicek et al. · IEEE Transactions on Electron Devices · 2000 · 115 citations

Engineering, Vlsi Design, Off-state Leakage Currents +16

Limitations of conductance to the measurement of the interface state density of MOS capacitors with tunneling gate dielectrics

Eric M. Vogel, W.K. Henson, Curt A. Richter et al. · IEEE Transactions on Electron Devices · 2000 · 107 citations

Gate Dielectrics, Electrical Engineering, Semiconductor Device +14