Chih-Wei Yang

Characteristics of AlGaN/GaN HEMTs With Various Field-Plate and Gate-to-Drain Extensions

Hsien‐Chin Chiu, Chih-Wei Yang, Hsiang-Chun Wang et al. · IEEE Transactions on Electron Devices · 2013 · 51 citations

Fp Extension, Wide-bandgap Semiconductor, Electrical Engineering +12

Downscaling limit of equivalent oxide thickness in formation of ultrathin gate dielectric by thermal-enhanced remote plasma nitridation

Chien-Hao Chen, Yean-Kuen Fang, S.F. Ting et al. · IEEE Transactions on Electron Devices · 2002 · 40 citations

Materials Science, Materials Engineering, Electrical Engineering +11

Low Hysteresis Dispersion La[sub 2]O[sub 3] AlGaN∕GaN MOS-HEMTs

Hsien‐Chin Chiu, Chao-Wei Lin, Chih-Wei Yang et al. · Journal of The Electrochemical Society · 2009 · 39 citations

Materials Science, Semiconductors, Electrical Engineering +15

Quality of the Oxidation Interface of AlGaN in Enhancement-Mode AlGaN/GaN High-Electron Mobility Transistors

Hsien‐Chin Chiu, Chih-Wei Yang, Chia-Hsuan Wu · IEEE Transactions on Electron Devices · 2012 · 37 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +12

Analysis of the Back-Gate Effect in Normally OFF p-GaN Gate High-Electron Mobility Transistor

Hsien‐Chin Chiu, Li-Yi Peng, Chih-Wei Yang et al. · IEEE Transactions on Electron Devices · 2015 · 32 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +10