1999 · 75 citations · 0 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationDevice ModelingElectrical CharacterizationMetal-oxide-semiconductor Field-effect TransistorsOxide SemiconductorsSemiconductor PhysicsCapacitanceCapacitance MeasurementCapacitance Measurement TechniquesEquivalent Oxide ThicknessGate Oxide Thickness EffectsMetal-oxide-semiconductor Field-effect Transistor ModelingMosfet ModelingOxide Thickness Measurement
Simple quantitative models of charge displacement due to the quantum effect and its influence on gate oxide thickness measurements are presented. An effective oxide thickness (T/sub DC/) is introduced which is relevant to MOSFET current modeling. Physical oxide thickness and T/sub DC/ can be extracted easily from capacitance measurement, and the electrical thickness can be predicted from a target physical thickness using these new models.