Applied Physics Letters · 1997 · 18 citations · 7 references
EngineeringMaterials SciencePhysicsCondensed Matter PhysicsElectronic MaterialsSemiconductor MaterialsDopingOptical Properties Of SemiconductorsSemiconductor Crystal GrowthSemiconductor Device MaterialsSemiconductor PhysicsSemiconductor Thin FilmsArsenic AbsorptionDoping In Thin FilmsGallium ArsenideLattice EnergyLow-temperature GrowthMolecular Beam EpitaxyOptical AbsorptionSemiconductor Doping
We have found that isovalent indium doping enhances arsenic excess in GaAs films grown by molecular beam epitaxy at low temperature. An increase in lattice expansion and near infrared optical absorption, as well as higher density of As clusters, have been observed in the indium-doped films when compared to the conventional indium-free ones.
7
New MBE buffer used to eliminate backgating in GaAs MESFETs
F. W. Smith, A. R. Calawa, C.-L. Chen et al. · IEEE Electron Device Letters · 1988 · 623 citations
Native point defects in low-temperature-grown GaAs
X. Liu, Amrita Prasad, Johji Nishio et al. · Applied Physics Letters · 1995 · 254 citations
Breakdown of crystallinity in low-temperature-grown GaAs layers
Z. Liliental‐Weber, W. Swider, K. M. Yu et al. · Applied Physics Letters · 1991 · 128 citations
Natural Sciences, Materials Engineering, Materials Science +17