GaAs buffer layers grown at low substrate temperatures using As2 and the formation of arsenic precipitates

Arsenic precipitates and the semi-insulating properties of GaAs buffer layers grown by low-temperature molecular beam epitaxy

A.C. Warren, J. M. Woodall, J. L. Freeouf et al. · Applied Physics Letters · 1990 · 434 citations · Full text

Engineering, Electrical Engineering, Materials Science +15

Structural properties of As-rich GaAs grown by molecular beam epitaxy at low temperatures

M. Kamińska, Z. Liliental‐Weber, E. R. Weber et al. · Applied Physics Letters · 1989 · 415 citations

Natural Sciences, Materials Science, Physics +17

Picosecond GaAs-based photoconductive optoelectronic detectors

F. W. Smith, H. Q. Le, V. Diadiuk et al. · Applied Physics Letters · 1989 · 348 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Formation of arsenic precipitates in GaAs buffer layers grown by molecular beam epitaxy at low substrate temperatures

M. R. Melloch, N. Ōtsuka, J. M. Woodall et al. · Applied Physics Letters · 1990 · 244 citations

Engineering, Materials Engineering, Materials Science +16

Effect of a GaAs buffer layer grown at low substrate temperatures on a high-electron-mobility modulation-doped two-dimensional electron gas

M. R. Melloch, David C. Miller, Bipul Das · Applied Physics Letters · 1989 · 67 citations

Engineering, Electrical Engineering, Materials Science +17