F. W. Smith

New MBE buffer used to eliminate backgating in GaAs MESFETs

F. W. Smith, A. R. Calawa, C.-L. Chen et al. · IEEE Electron Device Letters · 1988 · 622 citations

Semiconductors, Output Resistance, Electrical Engineering +11

Structural properties of As-rich GaAs grown by molecular beam epitaxy at low temperatures

M. Kamińska, Z. Liliental‐Weber, E. R. Weber et al. · Applied Physics Letters · 1989 · 415 citations

Materials Science, Semiconductors, Electrical Engineering +15

Subpicosecond carrier lifetime in GaAs grown by molecular beam epitaxy at low temperatures

Sandeep K. Gupta, M.Y. Frankel, J. A. Valdmanis et al. · Applied Physics Letters · 1991 · 414 citations · Full text

Optical Materials, Engineering, Optoelectronic Devices +19

Plant members of a family of sulfate transporters reveal functional subtypes.

F. W. Smith, P M Ealing, Malcolm J. Hawkesford et al. · Proceedings of the National Academy of Sciences · 1995 · 354 citations · Full text

Engineering, Botany, Molecular Biology +18

Coherent millimeter-wave generation by heterodyne conversion in low-temperature-grown GaAs photoconductors

E. R. Brown, F. W. Smith, K. A. McIntosh · Journal of Applied Physics · 1993 · 351 citations

Optical Materials, Engineering, Optical Heterodyne Conversion +20