A. R. Calawa

New MBE buffer used to eliminate backgating in GaAs MESFETs

F. W. Smith, A. R. Calawa, C.-L. Chen et al. · IEEE Electron Device Letters · 1988 · 622 citations

Semiconductors, Output Resistance, Electrical Engineering +11

Structural properties of As-rich GaAs grown by molecular beam epitaxy at low temperatures

M. Kamińska, Z. Liliental‐Weber, E. R. Weber et al. · Applied Physics Letters · 1989 · 415 citations

Materials Science, Semiconductors, Electrical Engineering +15

Subpicosecond carrier lifetime in GaAs grown by molecular beam epitaxy at low temperatures

Sandeep K. Gupta, M.Y. Frankel, J. A. Valdmanis et al. · Applied Physics Letters · 1991 · 414 citations · Full text

Optical Materials, Engineering, Optoelectronic Devices +19

Picosecond GaAs-based photoconductive optoelectronic detectors

F. W. Smith, H. Q. Le, V. Diadiuk et al. · Applied Physics Letters · 1989 · 347 citations · Full text

Photonics, Electrical Engineering, Coplanar Transmission Line +14

On the use of AsH3 in the molecular beam epitaxial growth of GaAs

A. R. Calawa · Applied Physics Letters · 1981 · 176 citations

Materials Engineering, Materials Science, Electrical Engineering +13