On the use of AsH3 in the molecular beam epitaxial growth of GaAs

Abstract

High-quality epitaxial layers of GaAs have been grown in a molecular beam epitaxial system using AsH3 as the arsenic source. Peak electron mobilities of over 130 000 cm2/V sec and 77-K mobilities as high as 110 000 cm2/V sec have been observed in a 5-μm-thick GaAs layer with a carrier concentration of 2.4×1014 cm−3. These layers were grown on Cr-doped semi-insulating GaAs substrates. Initial results indicate that As1 may be the preferred specie for the growth of high-purity GaAs.