A correlation between electron traps and growth processes in <i>n</i>-GaAs prepared by molecular beam epitaxy

Abstract

By using a single Knudsen source independently to generate molecular beams of As2 and As4 from elemental arsenic, a direct correlation has been observed between the arsenic species used and deep level concentrations in molecular beam epitaxy grown n-type GaAs films. Some preliminary observations on comparative growth temperature effects and Ge site occupancy are also reported.