Gallium Arsenide

Gallium Arsenide is a compound semiconductor material belonging to the class of III-V semiconductors, distinguished by its chemical composition of gallium and arsenic atoms arranged in a zincblende crystal structure, exhibiting direct bandgap and high electron mobility favorable for optoelectronic and high-frequency device applications.

2.9K

Publications

144.1K

Citations

8.3K

Authors

1.6K

Institutions

Publications per year

2017–2026

305

Variants

Gaas

Authors

8.3K

  1. JM
    J. M. Woodall

    IBM Research - Thomas J. Watson Research Center, United States

    18 publications · 1.4K citations

    15

    h-index

  2. RN
    R.C. Newman

    Imperial College London, United Kingdom

    18 publications · 797 citations

    14

    h-index

  3. RC
    R. C. Newman

    Imperial College London, United Kingdom

    13 publications · 492 citations

    13

    h-index

  4. NŌ
    N. Ōtsuka

    Purdue University West Lafayette, United States

    15 publications · 1.9K citations

    13

    h-index

  5. MR
    M. R. Melloch

    Purdue University West Lafayette, United States

    15 publications · 1.3K citations

    13

    h-index

1–5 of 8.3K

Venues

  1. Journal of Applied Physics

    304 publications · 17.7K citations

    59

    h-index

  2. Applied Physics Letters

    254 publications · 13.8K citations

    57

    h-index

  3. Journal of The Electrochemical Society

    JES · 100 publications · 3.8K citations

    38

    h-index

  4. Science

    40 publications · 13.1K citations

    37

    h-index

  5. Physical review. B, Condensed matter

    PRB · 73 publications · 4.6K citations

    34

    h-index

1–5