Gallium Arsenide
Gallium Arsenide is a compound semiconductor material belonging to the class of III-V semiconductors, distinguished by its chemical composition of gallium and arsenic atoms arranged in a zincblende crystal structure, exhibiting direct bandgap and high electron mobility favorable for optoelectronic and high-frequency device applications.
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2017–2026
305
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Gaas
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Observation of the Spin Hall Effect in Semiconductors
Yuichiro K. Kato, Roberto C. Myers, A. C. Gossard et al. · Science · 2004 · 2.6K citations
Graham T. Reed, Goran Z. Mashanovich, Frédéric Y. Gardes et al. · Nature Photonics · 2010 · 2.4K citations
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IBM Research - Thomas J. Watson Research Center, United States
18 publications · 1.4K citations
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RCA (United States)
New York, United States
25 h-index
83 publications
3.8K citations
Stanford University
Stanford, United States
25 h-index
116 publications
6.7K citations
Massachusetts Institute of Technology
Cambridge, United States
25 h-index
115 publications
7.3K citations
IBM Research - Thomas J. Watson Research Center
Yorktown Heights, United States
24 h-index
82 publications
5.5K citations
Purdue University West Lafayette
West Lafayette, United States
24 h-index
95 publications
6.7K citations

Centre National de la Recherche Scientifique
Paris, France
24 h-index
212 publications
7K citations
University of Illinois Urbana-Champaign
Urbana, United States
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117 publications
14.1K citations
Texas Instruments (United States)
Dallas, United States
21 h-index
69 publications
2.8K citations
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304 publications · 17.7K citations
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254 publications · 13.8K citations
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JES · 100 publications · 3.8K citations
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PRB · 73 publications · 4.6K citations
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