Yu. G. Musikhin

InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm

V. M. Ustinov, N. A. Maleev, A. E. Zhukov et al. · Applied Physics Letters · 1999 · 377 citations

Optical Materials, Engineering, Lateral Size +18

Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors

M. V. Maximov, A. F. Tsatsul’nikov, B. V. Volovik et al. · Physical review. B, Condensed matter · 2000 · 207 citations

Aluminium Nitride, Engineering, Electronic Properties +17

Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate

A. E. Zhukov, A. R. Kovsh, V. M. Ustinov et al. · IEEE Photonics Technology Letters · 1999 · 132 citations

Quantum Photonics, Optical Materials, Engineering +19

Quantum dot origin of luminescence in InGaN-GaN structures

I. L. Krestnikov, N. N. Ledentsov, A. Hoffmann et al. · Physical review. B, Condensed matter · 2002 · 108 citations

Photonics, Photoluminescence, Engineering +11

Electronic structure of self-assembled InAs quantum dots in GaAs matrix

P. N. Brounkov, A. Polimeni, S.T. Stoddart et al. · Applied Physics Letters · 1998 · 88 citations

Engineering, Gaas Valence Band, Semiconductor Materials +16