P. N. Brounkov

Electronic structure of self-assembled InAs quantum dots in GaAs matrix

P. N. Brounkov, A. Polimeni, S.T. Stoddart et al. · Applied Physics Letters · 1998 · 88 citations

Engineering, Gaas Valence Band, Semiconductor Materials +16

Simulation of the capacitance–voltage characteristics of a single-quantum-well structure based on the self-consistent solution of the Schrödinger and Poisson equations

P. N. Brounkov, T. Benyattou, G. Guillot · Journal of Applied Physics · 1996 · 54 citations

Wide-bandgap Semiconductor, Single-quantum-well Structure, Categoryquantum Electronics +17

Strain relaxation in stacked InAs/GaAs quantum dots studied by Raman scattering

Jordi Ibáñez, A. Patanè, M. Henini et al. · Applied Physics Letters · 2003 · 36 citations

Materials Science, Ii-vi Semiconductor, Downward Frequency Shift +14

Resonant tunneling and photoluminescence spectroscopy in quantum wells containing self-assembled quantum dots

A. Patanè, A. Polimeni, L. Eaves et al. · Journal of Applied Physics · 2000 · 21 citations

Engineering, Semiconductor Nanostructures, Nanoelectronics +17

Modulation of the luminescence spectra of InAs self-assembled quantum dots by resonant tunneling through a quantum well

A. Patanè, A. Polimeni, L. Eaves et al. · Physical review. B, Condensed matter · 2000 · 18 citations

Materials Science, Quantum Science, Photonics +14