P. N. Brounkov - Concepedia

Author

P. N. Brounkov

University of Nottingham

Also Known As

Brounkov, P. N., P N Brounkov, P. Brounkov, P. N. Brounkov, P.N Brounkov, P.N. Brounkov

Publications

280

Citations

H-Index

Concepts

All Affiliations

University of Nottingham Centre National de la Recherche Scientifique Institut National des Sciences Appliquées de Lyon Physico-Technical Institute University of Sheffield

About

P. N. Brounkov is an author at University of Nottingham specializing in applied physics, physics, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Applied Physics	8	8	257
2	Engineering	7	7	247
3	Materials Science	4	4	163
4	Electrical Engineering	3	3	126
5	Natural Sciences	1	1	17

P. N. Brounkov

Publications

257

Citations

H-Index

Page 1

	Year	Citations
Electronic structure of self-assembled InAs quantum dots in GaAs matrix P. N. Brounkov, A. Polimeni, S.T. Stoddart, Applied Physics Letters EngineeringGaas Valence BandSemiconductor MaterialsOptoelectronic DevicesSemiconductor Nanostructures	1998	88
Simulation of the capacitance–voltage characteristics of a single-quantum-well structure based on the self-consistent solution of the Schrödinger and Poisson equations P. N. Brounkov, T. Benyattou, G. Guillot Journal of Applied Physics Wide-bandgap SemiconductorSingle-quantum-well StructureCategoryquantum ElectronicsEngineeringNumerical Self-consistent Solution	1996	54
Strain relaxation in stacked InAs/GaAs quantum dots studied by Raman scattering Jordi Ibáñez, A. Patanè, M. Henini, Applied Physics Letters Materials ScienceIi-vi SemiconductorDownward Frequency ShiftEngineeringPhysics	2003	36
Resonant tunneling and photoluminescence spectroscopy in quantum wells containing self-assembled quantum dots A. Patanè, A. Polimeni, L. Eaves, Journal of Applied Physics EngineeringSemiconductor NanostructuresNanoelectronicsQuantum DotsSelf-assembled Quantum Dots	2000	21
Modulation of the luminescence spectra of InAs self-assembled quantum dots by resonant tunneling through a quantum well A. Patanè, A. Polimeni, L. Eaves, Physical review. B, Condensed matter Materials ScienceQuantum SciencePhotonicsLuminescence SpectraEngineering	2000	18
Determination of donor and acceptor level energies by admittance spectroscopy in 6H SiC Christophe Raynaud, C. Richier, P. N. Brounkov, Materials Science and Engineering B Semiconductor TechnologyElectrical EngineeringEngineeringPhysicsNatural Sciences	1995	17
Admittance spectroscopy of InAlAs/InGaAs single-quantum-well structure with high concentration of electron traps in InAlAs layers P. N. Brounkov, T. Benyattou, G. Guillot, Journal of Applied Physics Perpendicular ConductivityEngineeringPhysicsInalas LayersNanoelectronics	1995	13
Electron escape from self-assembled InAs/GaAs quantum dot stacks P. N. Brounkov, Alexandra Suvorova, M. V. Maximov, Physica B Condensed Matter Electron EscapePhysicsQuantum DeviceApplied PhysicsSemiconductor Nanostructures	1998	10

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